general purpose transistors pnp silicon maximum ratings symbol value unit collector-emitter voltage v ceo -20 v collector-base voltage v cbo -40 v emitter-base voltage v ebo collector current-continuoun ic -500 madc thermal charateeristics symbol max unit total device dissipation fr-5 board, (1) p d 225 mw 1.8 mw/ o c thermal resistance, junction to ambient r ja 556 o c / w p d 300 mw 2.4 mw/ o c thermal resistance, junction to ambient r ja 417 o c / w junction and storage temperature tj ,tstg -55 to +150 o c electrical characteristics (t a =25 o c unless otherwise noted) symbol min typ max unit off characteristics collector-emitter breakdown voltage v (br)ceo -20 - - v (i c =-1.0ma) emitter-base breakdown voltage v (br)ebo (i e =-100 collector-base breakdown voltage v (br)cbo -40 - - v (i c =-100 a) collector cutoff current (v cb =-35v) i cbo emitter cutoff current (v be =-4v) i ebo -150 na characteristic total device dissipation derate above 25 o c rating t a =25 o c derate above 25 o c alumina substrate, (2) t a =25 o c characteristic 1 sot-23 (to-236ab) 2 emitter 3 collector 1 base leshan radio company, ltd. a) feature l9012plt1g we declare that the material of product compliance with rohs requirements. device marking and ordering information device marking shipping l9012plt1g 12p 3000/tape&reel l9012plt3g 12p 10000/tape&reel l9012qlt1g 12q 3000/tape&reel l9012qlt3g 12q 10000/tape&reel l9012rlt1g 12r 3000/tape&reel l9012rlt3g 12r 10000/tape&reel L9012SLT1G 12s 3000/tape&reel l9012slt3g 12s 10000/tape&reel series -5 v -5 - - v - - -150 na 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2 3 rev.o 1/2
on characteristics dc current gain (i c =-50ma, v ce =-1v) h fe 100 - 600 collector-emitter saturation voltage (i c =-500ma,i b =-50ma) v ce(s) -- note: * p q r s h fe 100~200 150~300 200~400 300~600 leshan radio company, ltd. d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0180 0.0236 0.45 0.60 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.0984 2.10 2.50 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 solder plating. 2. lead thickness specified per l / f drawing with 1. controlling dimension: millimeters notes: sot-23 (to-236ab) l9012plt1g series -0.6 v rev.o 2/2
|
